| PART |
Description |
Maker |
| ZMY20G ZMY22G ZMY24G ZMY27G ZMY4.3G ZMY4.7G ZMY43G |
Surface mount Silicon-Zener Diodes (planar technology)
Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:23-21
1302 RECALIBRATED BY NEWARK INONE SERVICES
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:25mA; Current, It av:16A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
surface mount silicon Zener diodes 5.1 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
surface mount silicon Zener diodes 9.05 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
|
Diotec Elektronische
DIOTEC[Diotec Semiconductor]
Diotec Semiconductor AG
http://
|
| TC55257CFTL TC55257CFL-10 TC55257CFL-70 TC55257CPL |
SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
(TC55257xxx) Silicon Gate CMOS
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| IRG4BC40S |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A)
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
|
IRF[International Rectifier]
|
| KK74ACT86 KK74ACT86D |
Quad 2-Input Exclusive OR Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| IN74HC20AN IN74HC20A IN74HC20AD |
Dual 4-Input NAND Gate High-Performance Silicon-Gate CMOS
|
INTEGRAL[Integral Corp.]
|
| IN74AC86N IN74AC86 IN74AC86D |
Quad 2-Input Exclusive OR Gate High-Speed Silicon-Gate CMOS
|
INTEGRAL[Integral Corp.]
|
| IW4012BD IW4012BN |
Dual 4-input NAND gate, high-voltage silicon-gate CMOS
|
INTEGRAL
|
| IN74ACT00 |
Quad 2-Input NAND Gate High-Speed Silicon-Gate CMOS
|
INTEGRAL[Integral Corp.]
|
